Title :
Silicide technology for USJ in next technology node
Author :
Suguro, K. ; Iinuma, T. ; Izuha, M. ; Ohuchi, K. ; Hokazono, A. ; Miyano, K. ; Mizushima, I.
Author_Institution :
Semicond. Co., Toshiba Corp., Yokohama, Japan
Abstract :
Silicide technology for ultra-shallow junction in next technology node is discussed. Salicide material is changed from low resistivity refractory metal silicide to near-noble metal silicide from the view point of less consumption of Si by silicidation. The pn junction leakage for shallow S/D can be drastically improved by NiSi as compared with CoSi/sub 2/.
Keywords :
MOSFET; electrical resistivity; leakage currents; nickel compounds; p-n junctions; NiSi; low resistivity refractory metal silicide; near-noble metal silicide; pn junction leakage; salicide material; shallow S/D; silicidation; silicide technology; technology node; ultra shallow junction; Conductivity; Rapid thermal annealing; Rapid thermal processing; Semiconductor films; Silicidation; Silicides; Space technology; Sputter etching; Sputtering; Thermal resistance;
Conference_Titel :
Junction Technology, 2002. IWJT. Extended Abstracts of the Third International Workshop on
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-028-3
DOI :
10.1109/IWJT.2002.1225206
