• DocumentCode
    1951462
  • Title

    A novel fully integrated floating-gate MOSFET radiation dosimeter using VTH extractor

  • Author

    Wang, Yanbin ; Tarr, Gaivy ; Wang, Yanjie

  • Author_Institution
    Dept. of Electron., Carleton Univ., Ottawa, Ont., Canada
  • fYear
    2004
  • fDate
    20-23 June 2004
  • Firstpage
    9
  • Lastpage
    12
  • Abstract
    A novel fully integrated MOSFET radiation dosimeter consisting of two pairs of floating-gate sensor transistors with identical geometry and two VTH (threshold voltage) extractor circuits for the sensor transistors respectively is presented. The dosimeter output is the difference of the output of the two VTH extractor circuits, which presents the difference of the threshold voltage of the floating gate MOSFET sensors before and after radiation. The VTH extractor circuit has been simulated in Hspice using TSMC 0.35 μm CMOS technology at 2.9 V power supply. Simulated results show insensitivity to VDD variation and low power consumption of 0.44 mW.
  • Keywords
    CMOS integrated circuits; MOSFET; SPICE; circuit simulation; dosimeters; dosimetry; low-power electronics; 0.35 micron; 0.44 mW; 2.9 V; Hspice; TSMC CMOS technology; circuit simulation; floating gate MOSFET radiation dosimeter; floating gate MOSFET sensors; floating gate sensor transistors; power consumption; threshold voltage extractor circuits; Capacitance; Difference equations; Differential amplifiers; Differential equations; MOS devices; MOSFET circuits; Temperature sensors; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 2004. NEWCAS 2004. The 2nd Annual IEEE Northeast Workshop on
  • Print_ISBN
    0-7803-8322-2
  • Type

    conf

  • DOI
    10.1109/NEWCAS.2004.1359001
  • Filename
    1359001
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1951462