Title :
A 144 GHz InP/InGaAs composite collector heterostructure bipolar transistor
Author :
Feygenson, A. ; Hamm, R.A. ; Smith, P.R. ; Pinto, M.R. ; Montgomery, R.K. ; Yadvish, R.D. ; Temkin, H.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
We describe a composite collector InP/InGaAs heterostructure bipolar transistor with f/sub T/=144 GHz and f/sub max/=81 GHz. The breakdown voltage BV/sub CEO/ is greater than 5V and output conductance is essentially independent of the collector voltage. This combination of performance characteristics is obtained with a carefully optimized collector structure. A monolithic transimpedance amplifier based on composite collector transistors has a bandwidth of 28 GHz and gain of 40 dB Omega . A hybrid optical receiver constructed with these amplifiers has open eye diagrams at 32 Gbit/s and a 1*10/sup -9/ error rate with -23.7 dBm of incident power.<>
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; solid-state microwave devices; 144 GHz; 5 V; 81 GHz; EHF; InP-InGaAs; MM-wave devices; breakdown voltage; composite collector HBT; heterostructure bipolar transistor; hybrid optical receiver; monolithic transimpedance amplifier; performance characteristics; Gallium compounds; Heterojunction bipolar transistors; Indium compounds; Microwave devices;
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1992.307312
