A 144 GHz InP/InGaAs composite collector heterostructure bipolar transistor

Author

Feygenson, A. ; Hamm, R.A. ; Smith, P.R. ; Pinto, M.R. ; Montgomery, R.K. ; Yadvish, R.D. ; Temkin, H.

Author_Institution

AT&T Bell Labs., Murray Hill, NJ, USA

fYear

1992

fDate

13-16 Dec. 1992

Firstpage

75

Lastpage

78

Abstract

We describe a composite collector InP/InGaAs heterostructure bipolar transistor with f/sub T/=144 GHz and f/sub max/=81 GHz. The breakdown voltage BV/sub CEO/ is greater than 5V and output conductance is essentially independent of the collector voltage. This combination of performance characteristics is obtained with a carefully optimized collector structure. A monolithic transimpedance amplifier based on composite collector transistors has a bandwidth of 28 GHz and gain of 40 dB Omega . A hybrid optical receiver constructed with these amplifiers has open eye diagrams at 32 Gbit/s and a 1*10/sup -9/ error rate with -23.7 dBm of incident power.<>

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; solid-state microwave devices; 144 GHz; 5 V; 81 GHz; EHF; InP-InGaAs; MM-wave devices; breakdown voltage; composite collector HBT; heterostructure bipolar transistor; hybrid optical receiver; monolithic transimpedance amplifier; performance characteristics; Gallium compounds; Heterojunction bipolar transistors; Indium compounds; Microwave devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-0817-4

Type

conf

DOI

10.1109/IEDM.1992.307312

Filename

307312