Improvement in morphology of nickel silicide film with carbon

Author

Nakatsuka, O. ; Tsuchiya, Y. ; Sakai, A. ; Zaima, S. ; Murota, J. ; Yasuda, Y.

Author_Institution

Center for Integrated Res. in Sci. & Eng., Nagoya Univ., Japan

fYear

2002

fDate

2-3 Dec. 2002

Firstpage

71

Lastpage

72

Abstract

We have investigated the effect of C on Ni silicidation on Si/sub 1-x/C/sub x/ (x=0.004) substrate. The addition of C effectively suppresses the agglomeration of the Ni silicide layers, which results in the low sheet resistance even after annealing at 850/spl deg/C. Pile-up of C at the interface between the Ni silicide layer and the Si/sub 1-x/C/sub x/ film is clearly observed and this is key to improving the silicide morphology and its electrical property as the contact material.

Keywords

annealing; electrical contacts; electrical resistivity; metallic epitaxial layers; nickel compounds; semiconductor-metal boundaries; surface morphology; 850 degC; Ni silicidation; NiSi-Si/sub 1-x/C/sub x/; Si; agglomeration suppression; annealing; carbon addition; electrical property; nickel silicide film; sheet resistance; silicide morphology; Annealing; Contacts; Electric resistance; Nickel; Scanning electron microscopy; Sheet materials; Silicidation; Silicides; Substrates; Surface morphology;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology, 2002. IWJT. Extended Abstracts of the Third International Workshop on

Conference_Location

Tokyo, Japan

Print_ISBN

4-89114-028-3

Type

conf

DOI

10.1109/IWJT.2002.1225207

Filename

1225207