Title :
Improvement in morphology of nickel silicide film with carbon
Author :
Nakatsuka, O. ; Tsuchiya, Y. ; Sakai, A. ; Zaima, S. ; Murota, J. ; Yasuda, Y.
Author_Institution :
Center for Integrated Res. in Sci. & Eng., Nagoya Univ., Japan
Abstract :
We have investigated the effect of C on Ni silicidation on Si/sub 1-x/C/sub x/ (x=0.004) substrate. The addition of C effectively suppresses the agglomeration of the Ni silicide layers, which results in the low sheet resistance even after annealing at 850/spl deg/C. Pile-up of C at the interface between the Ni silicide layer and the Si/sub 1-x/C/sub x/ film is clearly observed and this is key to improving the silicide morphology and its electrical property as the contact material.
Keywords :
annealing; electrical contacts; electrical resistivity; metallic epitaxial layers; nickel compounds; semiconductor-metal boundaries; surface morphology; 850 degC; Ni silicidation; NiSi-Si/sub 1-x/C/sub x/; Si; agglomeration suppression; annealing; carbon addition; electrical property; nickel silicide film; sheet resistance; silicide morphology; Annealing; Contacts; Electric resistance; Nickel; Scanning electron microscopy; Sheet materials; Silicidation; Silicides; Substrates; Surface morphology;
Conference_Titel :
Junction Technology, 2002. IWJT. Extended Abstracts of the Third International Workshop on
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-028-3
DOI :
10.1109/IWJT.2002.1225207
