Influence of a small amount of oxygen during rapid thermal processing on cobalt salicide at 65 nm gate length

Author

Kanda, Y. ; Ogura, M. ; Honda, K. ; Tsutsumi, S. ; Maekawa, K. ; Kobayashi, K. ; Yoneda, M.

Author_Institution

ULSI Dev. Center, Mitsubishi Electr. Corp., Hyogo, Japan

fYear

2002

fDate

2-3 Dec. 2002

Firstpage

73

Lastpage

74

Abstract

The main issue in cobalt salicide process is the difficulty of obtaining low sheet resistances at narrow line width. In the present work, we have studied the relationship between oxygen concentration in rapid thermal processing (RTP) chamber and the electrical properties of cobalt silicide in CMOS devices. It is found that failures of CoSi/sub 2//poly-Si gate electrodes with 62 nm gate length are induced by a small amount of oxygen (25 ppm) in the chamber of RTP system.

Keywords

MOSFET; cobalt compounds; elemental semiconductors; rapid thermal processing; silicon; 65 nm; CMOS devices; CoSi/sub 2/-Si; CoSi/sub 2//poly-Si gate electrodes; RTP chamber; cobalt salicide; electrical properties; gate length; oxygen concentration; rapid thermal processing; sheet resistances; Annealing; Cobalt; Electrodes; Nitrogen; Oxygen; Rapid thermal processing; Sheet materials; Silicides; Surface cleaning; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology, 2002. IWJT. Extended Abstracts of the Third International Workshop on

Conference_Location

Tokyo, Japan

Print_ISBN

4-89114-028-3

Type

conf

DOI

10.1109/IWJT.2002.1225208

Filename

1225208