DocumentCode
1951531
Title
A heterojunction bipolar transistor with an epitaxially regrown emitter
Author
Tanoue, T. ; Masuda, H. ; Washio, K. ; Nakamura, T.
Author_Institution
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
fYear
1992
fDate
13-16 Dec. 1992
Firstpage
87
Lastpage
90
Abstract
We propose a new structure for heterojunction bipolar transistors (HBTs) suitable for scaling down and higher speed operation. For this structure, we have developed a new process technology, which is epitaxial re-growth of an emitter onto a base. An InGaAs/InAlAs HBT with an emitter epitaxially regrown on a base has been demonstrated for the first time.<>
Keywords
III-V semiconductors; aluminium compounds; epitaxial growth; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor growth; HBT; InGaAs-InAlAs; emitter epitaxial regrowth; epitaxially regrown emitter; heterojunction bipolar transistor; high speed operation; process technology; Aluminum compounds; Epitaxial growth; Gallium compounds; Heterojunction bipolar transistors; Indium compounds; Semiconductor growth;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-0817-4
Type
conf
DOI
10.1109/IEDM.1992.307315
Filename
307315
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