Title :
Experimental determination of the intrinsic series resistance of vertical power diodes by means of a special test structure
Author :
Bellone, S. ; Daliento, S. ; Sanseverino, A.
Author_Institution :
Dept. of Inf. Eng., Salerno Univ., Italy
Abstract :
In this paper the capability of a new test pattern to extract both the intrinsic series resistance and the injection level of vertical power diodes is presented. The method is based on the measure of the d.c. voltage manifesting at a sense region placed near the active device. Two dimensional simulations showing the correct operation of the test structure are reported. Finally experimental results obtained on a vertical diode are presented
Keywords :
power semiconductor diodes; semiconductor device measurement; DC voltage measurement; injection level; intrinsic series resistance; parameter extraction; test structure; two-dimensional simulation; vertical power diode; Art; Diodes; Doping; Electrical resistance measurement; Equations; Geometry; Medical simulation; Power measurement; Testing; Voltage;
Conference_Titel :
Microelectronics, 2000. Proceedings. 2000 22nd International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-5235-1
DOI :
10.1109/ICMEL.2000.838769
