DocumentCode
1951546
Title
Experimental determination of the intrinsic series resistance of vertical power diodes by means of a special test structure
Author
Bellone, S. ; Daliento, S. ; Sanseverino, A.
Author_Institution
Dept. of Inf. Eng., Salerno Univ., Italy
Volume
2
fYear
2000
fDate
2000
Firstpage
629
Abstract
In this paper the capability of a new test pattern to extract both the intrinsic series resistance and the injection level of vertical power diodes is presented. The method is based on the measure of the d.c. voltage manifesting at a sense region placed near the active device. Two dimensional simulations showing the correct operation of the test structure are reported. Finally experimental results obtained on a vertical diode are presented
Keywords
power semiconductor diodes; semiconductor device measurement; DC voltage measurement; injection level; intrinsic series resistance; parameter extraction; test structure; two-dimensional simulation; vertical power diode; Art; Diodes; Doping; Electrical resistance measurement; Equations; Geometry; Medical simulation; Power measurement; Testing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 2000. Proceedings. 2000 22nd International Conference on
Conference_Location
Nis
Print_ISBN
0-7803-5235-1
Type
conf
DOI
10.1109/ICMEL.2000.838769
Filename
838769
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