Co-integration of GaAlAs/GaAs HBTs and GaAs FETs with a simple, manufacturable process

Author

Cheskis, D. ; Chang, C.E. ; Ku, W.H. ; Asbeck, P.M. ; Chang, M.F. ; Pierson, R.L. ; Sailer, A.

Author_Institution

California Univ., San Diego, La Jolla, CA, USA

fYear

1992

fDate

13-16 Dec. 1992

Firstpage

91

Lastpage

94

Abstract

This paper describes a simple approach for the integration of GaAlAs/GaAs HBTs and MESFETs on the same wafer. Our approach is based on using a GaAs layer on top of the HBT emitter region as the FET channel, which is integrated with only a small extension of the standard HBT process. Transconductance reaches 400 mS/mm for 1 mu m gate length devices while f/sub t/ and f/sub max/ are as high as 11 and 13 GHz, respectively.<>

Keywords

III-V semiconductors; MMIC; Schottky gate field effect transistors; aluminium compounds; digital integrated circuits; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; integrated circuit manufacture; monolithic integrated circuits; semiconductor device models; 1 micron; 11 GHz; 13 GHz; 400 mS/mm; FET channel; GaAlAs-GaAs; GaAlAs/GaAs HBTs; GaAs FETs; HBT emitter region; MESFETs; cointegration; manufacturable process; Aluminum compounds; Digital integrated circuits; Equivalent circuits; Gallium compounds; Heterojunction bipolar transistors; Integrated circuit manufacture; MESFETs; MMICs; Monolithic integrated circuits; Semiconductor device modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-0817-4

Type

conf

DOI

10.1109/IEDM.1992.307316

Filename

307316