Title :
An improved technology of 6H-SiC power diodes
Author :
Badila, M. ; Brezeanu, G. ; Dilimot, G. ; Millan, S. ; Godignon, P. ; Chante, J.P. ; Locatelli, M.L. ; Savkina, N.S. ; Lebedev, A.
Author_Institution :
IMT, Bucharest, Romania
Abstract :
An elaborated technology of SiC pn junction is proposed. A cellular structure for 6H-SiC power devices is designed and optimized. Based on a matrix structure with 0.16 mm2 cell area medium power (600 V breakdown voltage and 1 A at forward voltage of 5 V) pn diode has been fabricated and tested. The micropipes effect is eliminated
Keywords :
p-n junctions; power semiconductor diodes; silicon compounds; wide band gap semiconductors; 600 V; 6H-SiC power diode; SiC; cellular structure; micropipe effect; p-n junction; Anodes; Boron; Diodes; Doping; Epitaxial growth; Etching; Silicon carbide; Substrates; Thermal conductivity; Voltage;
Conference_Titel :
Microelectronics, 2000. Proceedings. 2000 22nd International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-5235-1
DOI :
10.1109/ICMEL.2000.838770
