Title :
Low temperature activation of ion implanted dopants: a review
Author :
Borland, John O.
Author_Institution :
Varian Semicond. Equip. Associates, Newburyport, MA, USA
Abstract :
Ion implanted dopants can be electrically activated through low temperature annealing in the 450/spl deg/C to 800/spl deg/C as reported in literature over the past 25 years. However, researchers in the last few years have applied this technique to realize ultra shallow junctions (USJ) for source drain extensions to satisfy the device junction roadmap requirements for the 65 nm node and beyond. Therefore this paper will review the current status of low temperature annealing for USJ formation.
Keywords :
annealing; boron; elemental semiconductors; ion implantation; semiconductor thin films; silicon; 450 to 800 degC; 65 nm; Si:B; annealing; dopants; electrically activation; ion implantation; source drain extensions; ultra shallow junctions; Annealing; Boron; Crystallization; Furnaces; High performance computing; Implants; Logic devices; Plasma temperature; Silicon; Temperature distribution;
Conference_Titel :
Junction Technology, 2002. IWJT. Extended Abstracts of the Third International Workshop on
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-028-3
DOI :
10.1109/IWJT.2002.1225211
