Title :
As and Sb diffusion profiles in thin silicon-on-insulator wafers
Author :
Shibata, Y. ; Ichimura, M. ; Arai, E.
Author_Institution :
Dept. of Electr. & Comput. Eng., Nagoya Inst. of Technol., Japan
Abstract :
As and Sb diffusion profiles in bulk Si and thin SOI (silicon on insulator) were measured using SIMS (Secondary Ion Mass Spectroscopy) and simulated using TSUPREM4. No difference was observed between diffusion profiles in bulk Si and those in SOI. This is in contrast with the B and P diffusions, for which the diffusion is retarded in SOI. This is because the diffusion coefficients of As and Sb are much smaller than those of B and P.
Keywords :
antimony; arsenic; diffusion; doping profiles; elemental semiconductors; secondary ion mass spectra; silicon-on-insulator; As diffusion profiles; SIMS; SOI; Sb diffusion profiles; Si:As-SiO/sub 2/; Si:Sb-SiO/sub 2/; diffusion coefficients; secondary ion mass spectroscopy; thin silicon on insulator wafers; Computational modeling; Computer simulation; Electric variables measurement; Electronic mail; Fabrication; Large scale integration; Mass spectroscopy; Oxidation; Parasitic capacitance; Silicon on insulator technology;
Conference_Titel :
Junction Technology, 2002. IWJT. Extended Abstracts of the Third International Workshop on
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-028-3
DOI :
10.1109/IWJT.2002.1225212
