As and Sb diffusion profiles in thin silicon-on-insulator wafers

Author

Shibata, Y. ; Ichimura, M. ; Arai, E.

Author_Institution

Dept. of Electr. & Comput. Eng., Nagoya Inst. of Technol., Japan

fYear

2002

fDate

2-3 Dec. 2002

Firstpage

89

Lastpage

90

Abstract

As and Sb diffusion profiles in bulk Si and thin SOI (silicon on insulator) were measured using SIMS (Secondary Ion Mass Spectroscopy) and simulated using TSUPREM4. No difference was observed between diffusion profiles in bulk Si and those in SOI. This is in contrast with the B and P diffusions, for which the diffusion is retarded in SOI. This is because the diffusion coefficients of As and Sb are much smaller than those of B and P.

Keywords

antimony; arsenic; diffusion; doping profiles; elemental semiconductors; secondary ion mass spectra; silicon-on-insulator; As diffusion profiles; SIMS; SOI; Sb diffusion profiles; Si:As-SiO/sub 2/; Si:Sb-SiO/sub 2/; diffusion coefficients; secondary ion mass spectroscopy; thin silicon on insulator wafers; Computational modeling; Computer simulation; Electric variables measurement; Electronic mail; Fabrication; Large scale integration; Mass spectroscopy; Oxidation; Parasitic capacitance; Silicon on insulator technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology, 2002. IWJT. Extended Abstracts of the Third International Workshop on

Conference_Location

Tokyo, Japan

Print_ISBN

4-89114-028-3

Type

conf

DOI

10.1109/IWJT.2002.1225212

Filename

1225212