Title :
A new generation of power devices based on the concept of the “Floating Islands”
Author :
Cézac, N. ; Rossel ; Morancho, Frederic ; Tranduc, H. ; Peyre-Lavigne, A. ; Pagès, I.
Author_Institution :
Lab. d´´Archit. et d´´Analyse des Syst., CNRS, Toulouse, France
Abstract :
In this paper, a new concept called “Floating Islands Diode” (FLI-Diode) is proposed: the voltage handling capability of this new diode is assumed by the association of several PN junctions in series. This new concept can be applied to any power devices (lateral or vertical): for instance, the specific on-resistance of a 900 Volts Vertical DMOS Transistor is strongly improved (reduction of 70% when compared to the conventional structure)
Keywords :
power MOSFET; power semiconductor diodes; 900 V; FLIMOSFET; PN junction; floating islands diode; power device; specific on-resistance; vertical DMOS transistor; Diodes; Electronic ballasts; Lamps; MOSFET circuits; Motor drives; Power MOSFET; Power generation; Power supplies; Switches; Voltage;
Conference_Titel :
Microelectronics, 2000. Proceedings. 2000 22nd International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-5235-1
DOI :
10.1109/ICMEL.2000.838771
