DocumentCode
1951612
Title
A new generation of power devices based on the concept of the “Floating Islands”
Author
Cézac, N. ; Rossel ; Morancho, Frederic ; Tranduc, H. ; Peyre-Lavigne, A. ; Pagès, I.
Author_Institution
Lab. d´´Archit. et d´´Analyse des Syst., CNRS, Toulouse, France
Volume
2
fYear
2000
fDate
2000
Firstpage
637
Abstract
In this paper, a new concept called “Floating Islands Diode” (FLI-Diode) is proposed: the voltage handling capability of this new diode is assumed by the association of several PN junctions in series. This new concept can be applied to any power devices (lateral or vertical): for instance, the specific on-resistance of a 900 Volts Vertical DMOS Transistor is strongly improved (reduction of 70% when compared to the conventional structure)
Keywords
power MOSFET; power semiconductor diodes; 900 V; FLIMOSFET; PN junction; floating islands diode; power device; specific on-resistance; vertical DMOS transistor; Diodes; Electronic ballasts; Lamps; MOSFET circuits; Motor drives; Power MOSFET; Power generation; Power supplies; Switches; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 2000. Proceedings. 2000 22nd International Conference on
Conference_Location
Nis
Print_ISBN
0-7803-5235-1
Type
conf
DOI
10.1109/ICMEL.2000.838771
Filename
838771
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