Title :
Bulk CMOS technology for SOC
Author_Institution :
Sci.-Based Ind. Park, Taiwan Semicond. Manuf. Co., Hsin-Chu, Taiwan
Abstract :
CMOS technology scaling has come to a point whereby traditional assumptions that warranted a fair degree of de-coupling between process development and circuit/system design do not hold. One specific example relates to chip standby leakage. Today´s most advanced transistor designs push gate dielectric thickness into a regime where direct tunneling currents are no longer negligible. Meanwhile, the portable electronics sector had become a key industry driver demanding VLSI circuits with ever increasing functionality-performance needs while maintaining tight controls on power consumption. To conciliate the scaling-driven technology fundamental limitations with the industry evolution requirements, flexible CMOS technologies and tighter interaction between process development and circuit/system design are needed to efficiently realize Systems on a Chip (SoC). This paper discusses aspects of bulk CMOS SoC technology definition and front-end scaling trends.
Keywords :
CMOS integrated circuits; VLSI; integrated circuit design; semiconductor device models; system-on-chip; CMOS SOC technology; VLSI circuits; chip standby leakage; circuit/system design; complementary metal oxide semiconductor technology; gate dielectric thickness; portable electronics sector; power consumption control; scaling driven technology; system on a chip technology; system-on-chip; transistor designs; very large scale integration circuits; CMOS process; CMOS technology; Circuits; Dielectrics; Electrical equipment industry; Electronics industry; Industrial electronics; System-on-a-chip; Transistors; Tunneling;
Conference_Titel :
Junction Technology, 2002. IWJT. Extended Abstracts of the Third International Workshop on
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-028-3
DOI :
10.1109/IWJT.2002.1225213