DocumentCode
1951632
Title
Trends in low-voltage embedded RAMs
Author
Itoh, Kiyoo ; Osada, Kenichi ; Kawahara, Takayuki
Author_Institution
Central Res. Lab., Hitachi Ltd., Japan
fYear
2004
fDate
20-23 June 2004
Firstpage
45
Lastpage
48
Abstract
Low-voltage high-density embedded (e-) RAMs, focusing on RAM cells and peripheral circuits, are described. First, challenges and trends in low-voltage e-RAMs are described based on the S/N issue of RAM cells, and leakage and speed-variation issues of peripheral circuits. Next, state-of-the-art low-voltage e-DRAMs and e-SRAMs are investigated, focusing on leakage reduction. Finally, future prospects for e-RAMs are discussed in terms of low-voltage designs.
Keywords
DRAM chips; SRAM chips; embedded systems; low-power electronics; RAM cells; leakage reduction; low voltage design; low voltage e-DRAM; low voltage e-SRAM; low voltage embedded RAM; peripheral circuits; Capacitance; Circuits; Degradation; Low voltage; Power dissipation; Power supplies; Random access memory; Samarium; Signal to noise ratio; Subthreshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2004. NEWCAS 2004. The 2nd Annual IEEE Northeast Workshop on
Print_ISBN
0-7803-8322-2
Type
conf
DOI
10.1109/NEWCAS.2004.1359012
Filename
1359012
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