The experimental study on the temperature characteristics of the BRT and the EST

Author

Jeon, Byung-Chul ; Dae-Seok Byeon ; Oh, Jae-Keun ; Han, Min-Koo ; Choi, Yearn-Ik

Author_Institution

Sch. of Electr. Eng., Seoul Nat. Univ., South Korea

Volume

2

fYear

2000

fDate

2000

Firstpage

645

Abstract

The high temperature characteristics of a BRT (Base Resistance controlled Thyristor) and a DCEST (Dual-Channel Emitter Switched Thyristor) were measured and compared. At the current density of 200 A/cm², the forward voltage drop of the BRT is 1.50 V at 25°C, 1.45 V at 75°C and 1.41 V at 125°C, while that of the DCEST is 2.67 V at 25°C, 2.79 V at 75°C and 3.27 V at 125°C. The BRT had the lower forward voltage drop than the DCEST and the DCEST had a negative feedback of the temperature. Both devices were fabricated using an IGBT-like process sequences and their forward I-V characteristics were measured under the ambient temperature range from 25°C to 125°C

Keywords

MOS-controlled thyristors; 25 to 125 C; BRT; DCEST; I-V characteristics; base resistance controlled thyristor; dual-channel emitter switched thyristor; forward voltage drop; negative feedback; temperature characteristics; Anodes; Bipolar transistors; Buffer layers; Doping; Impedance; Low voltage; Power systems; Substrates; Temperature; Thyristors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2000. Proceedings. 2000 22nd International Conference on

Conference_Location

Nis

Print_ISBN

0-7803-5235-1

Type

conf

DOI

10.1109/ICMEL.2000.838773

Filename

838773