DocumentCode
1951681
Title
Dark current quantization in CCD image sensors
Author
McColgin, W.C. ; Lavine, J.P. ; Kyan, J. ; Nichols, D.N. ; Stancampiano, C.V.
Author_Institution
Microelectron. Technol. Div., Eastman Kodak Co., Rochester, NY, USA
fYear
1992
fDate
13-16 Dec. 1992
Firstpage
113
Lastpage
116
Abstract
We have investigated the effects of deliberate heavy metal contamination on dark current and image defects in charge-coupled device (CCD) imagers. Analysis of dark current in these imager wafers has revealed at least four deep-level traps and their distinctive quantized dark current peaks. We have identified three of the traps as due to gold, nickel, and cobalt. By analyzing the dark current "spectrum" obtained for extended integration times, these contaminants can be identified and detected with a sensitivity of 1.0E+9 traps/cm/sup 3/ or better using standard image-testing equipment.<>
Keywords
CCD image sensors; deep levels; electron traps; quantisation; CCD image sensors; dark current quantization; deep-level traps; heavy metal contamination; image defects; image-testing equipment; imager wafers; integration times; Charge carrier lifetime; Charge coupled image sensors; Quantization;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-0817-4
Type
conf
DOI
10.1109/IEDM.1992.307321
Filename
307321
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