Title :
Dark current quantization in CCD image sensors
Author :
McColgin, W.C. ; Lavine, J.P. ; Kyan, J. ; Nichols, D.N. ; Stancampiano, C.V.
Author_Institution :
Microelectron. Technol. Div., Eastman Kodak Co., Rochester, NY, USA
Abstract :
We have investigated the effects of deliberate heavy metal contamination on dark current and image defects in charge-coupled device (CCD) imagers. Analysis of dark current in these imager wafers has revealed at least four deep-level traps and their distinctive quantized dark current peaks. We have identified three of the traps as due to gold, nickel, and cobalt. By analyzing the dark current "spectrum" obtained for extended integration times, these contaminants can be identified and detected with a sensitivity of 1.0E+9 traps/cm/sup 3/ or better using standard image-testing equipment.<>
Keywords :
CCD image sensors; deep levels; electron traps; quantisation; CCD image sensors; dark current quantization; deep-level traps; heavy metal contamination; image defects; image-testing equipment; imager wafers; integration times; Charge carrier lifetime; Charge coupled image sensors; Quantization;
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1992.307321
