Two-dimensional simulation of stress induced orientation effect in self-aligned GaAs MESFETs

The stress-induced orientation effects in self-aligned GaAs MESFETs have been studied using a two-dimensional analysis. Devices oriented along different crystal directions, with different gate lengths and under different stress conditions, were studied. It was found that the piezoelectric effect caused by the surface stress plays a very important role in the device characteristics of short-channel self-aligned MESFETs. The short-channel effects can be suppressed and the device performance improved if the devices are oriented in the right direction and the thickness and the stress of the surface dielectric layer are properly chosen.<>