Title :
Two-dimensional simulation of stress induced orientation effect in self-aligned GaAs MESFETs
Author :
Lo, S.-H. ; Lee, C.-P.
Author_Institution :
Inst. of Electron., Nat. Chiao Tung Univ., Hsin Chu, Taiwan
Abstract :
The stress-induced orientation effects in self-aligned GaAs MESFETs have been studied using a two-dimensional analysis. Devices oriented along different crystal directions, with different gate lengths and under different stress conditions, were studied. It was found that the piezoelectric effect caused by the surface stress plays a very important role in the device characteristics of short-channel self-aligned MESFETs. The short-channel effects can be suppressed and the device performance improved if the devices are oriented in the right direction and the thickness and the stress of the surface dielectric layer are properly chosen.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; piezoelectricity; semiconductor device models; 2D simulation; GaAs; piezoelectric effect; self-aligned MESFETs; short-channel effects; stress induced orientation effect; surface dielectric layer; surface stress; two-dimensional analysis; Capacitive sensors; Compressive stress; Dielectric substrates; Difference equations; Electrons; FETs; Gallium arsenide; MESFETs; Piezoelectric effect; Threshold voltage;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1989. Technical Digest 1989., 11th Annual
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/GAAS.1989.69343
