A low loss Schottky diodes with a linearly graded doping profile using ion-implantation and out-diffusion from substrate

Author

Kim, Sung-Lyong ; Choi, Yearn-Ik

Author_Institution

Sch. of Electron. Eng., Ajou Univ., Suwon, South Korea

Volume

2

fYear

2000

fDate

2000

Firstpage

655

Abstract

A low loss Schottky rectifier employing a linearly graded doping profile made by new method of epitaxial layer growth is proposed. The linearly graded doping profile is obtained by annealing and out-diffusion from antimony doped substrate after phosphorus ion-implantation. The characteristics of the Schottky diodes employing this method are verified by two dimensional simulation and measurement with SRP (Spreading Resistance Probe). In case of 30 V rated Schottky diodes, the current density of the proposed device is increased about 28% compared with that of the conventional device when forward voltage drop is 0.5 V

Keywords

Schottky diodes; annealing; diffusion; doping profiles; ion implantation; power semiconductor diodes; semiconductor epitaxial layers; solid-state rectifiers; 30 V; Schottky diode; Si:Sb,P; annealing; antimony doped substrate; current density; epitaxial layer growth; forward voltage drop; ion implantation; linearly graded doping profile; low loss rectifier; out-diffusion; phosphorus ion implantation; spreading resistance probe measurement; two-dimensional simulation; Annealing; Current density; Doping profiles; Electrical resistance measurement; Epitaxial layers; Probes; Rectifiers; Schottky diodes; Substrates; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2000. Proceedings. 2000 22nd International Conference on

Conference_Location

Nis

Print_ISBN

0-7803-5235-1

Type

conf

DOI

10.1109/ICMEL.2000.838775

Filename

838775