All-silicon internal barrier detectors: a voltage-tunable LWIR staring focal plane technology

Author

Temofonte, T.A. ; Braggins, T.T. ; Emtage, P.R. ; Bevan, M.J. ; Thomas, R.N. ; Nathanson, H.C. ; Halvis, J. ; Shiskowski, R.R. ; Wilson, T.E. ; McCann, D.H.

Author_Institution

Sci. & Technol. Center, Westinghouse Electr. Corp., Pittsburgh, PA, USA

fYear

1992

fDate

13-16 Dec. 1992

Firstpage

121

Lastpage

124

Abstract

An all-silicon LWIR staring focal plane technology is described which has the potential of exceptionally high uniformity and resolution, 77K operation, and a demonstrated electronic tunability of the cut-off wavelength. p/sup +/np homojunction internal barrier detectors have quantum efficiencies of over 5% from 4.5 to 9.5 mu m and 0.2% at 12 mu m, exceeding the performance of all other internal photoemission detectors. Imagery (using a 8-11.5 mu m passband filter) with 128*128 p/sup +/np detector arrays bonded to silicon p-channel CMOS multiplexers was successfully demonstrated.<>

Keywords

elemental semiconductors; image sensors; infrared detectors; infrared imaging; silicon; 128 pixel; 16384 pixel; 4.5 to 12 mum; 77 K; CMOS multiplexers; Si; cut-off wavelength; electronic tunability; internal barrier detectors; p/sup +/np detector arrays; p/sup +/np homojunction; quantum efficiencies; resolution; uniformity; voltage-tunable LWIR staring focal plane; Image sensors; Infrared detectors; Infrared imaging; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-0817-4

Type

conf

DOI

10.1109/IEDM.1992.307323

Filename

307323