• DocumentCode
    1951745
  • Title

    Analytical expression for the breakdown voltage of the gated diodes

  • Author

    Yun, Sang-Bok ; Choi, Ycarn-lk

  • Author_Institution
    Sch. of Electron. Eng., Ajou Univ., Suwon, South Korea
  • Volume
    2
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    667
  • Abstract
    Analytical expression for the breakdown voltage of the gated diodes was derived in terms of the doping concentration, gate voltage and oxide thickness, and verified by two-dimensional device simulator, ATLAS. The proposed equation agrees well with simulation results within 5% average error when the gate voltage changes from -70 V to 130 V in case of ND=1×1015/cm3 and agrees well with simulation results within 10% average error when the doping concentration changes from 5×1014/cm3 to 2×1015/cm3
  • Keywords
    power semiconductor diodes; semiconductor device breakdown; -70 to 130 V; ATLAS; breakdown voltage; doping concentration; gate voltage; gated diode; oxide thickness; two-dimensional device simulation; Breakdown voltage; Diodes; Doping; Electric breakdown; Equations; Human resource management; Large Hadron Collider;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 2000. Proceedings. 2000 22nd International Conference on
  • Conference_Location
    Nis
  • Print_ISBN
    0-7803-5235-1
  • Type

    conf

  • DOI
    10.1109/ICMEL.2000.838778
  • Filename
    838778
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1951745