Title :
Good temperature coefficient of frequency SAW resonator on a SiO2/Al/LiNbO3 structure
Author :
Nakanishi, H. ; Nakamura, H. ; Tsurunari, T. ; Fujiwara, J. ; Hamaoka, Y. ; Hashimoto, K.
Author_Institution :
Corp. Components Dev. Div., Panasonic Electron. Devices Co. Ltd., Kadoma, Japan
Abstract :
This paper describes a good temperature coefficient of frequency (TCF) surface acoustic wave (SAW) resonator on a SiO2/Al/LiNbO3 structure. We studied the dependence of TCF and electromechanical coupling factor (K2) of shear-horizontal (SH) SAW on the SiO2 thickness, where the SiO2 shape control technique is applied to suppress spurious responses caused by Rayleigh-mode. As the results, we could realize high performance SAW resonator having moderate K2 (8%) and zero TCF with complete suppression of the Rayleigh-mode spurious response. It was demonstrated that the SiO2 shape control technique is effective for suppression of the Rayleigh-mode spurious response in the SAW resonator using the SiO2/Al/LiNbO3 structure with wide range of SiO2 thicknesses. We also revealed applicability of the SiO2/Al/LiNbO3 structure to SAW duplexers with narrow duplex gap.
Keywords :
aluminium; code division multiple access; electromechanical effects; lithium compounds; shape control; silicon compounds; surface acoustic wave resonators; surface acoustic waves; Rayleigh-mode spurious response suppression; SAW duplexer; SiO2-Al-LiNbO3; TCF; electromechanical coupling factor; narrow duplex gap; shape control technique; shear-horizontal SAW; surface acoustic wave resonator; temperature coefficient of frequency SAW resonator; Lithium niobate; Resonant frequency; Shape; Shape control; Surface acoustic waves; Temperature; Rayleigh-mode spurious response; SAW resonator; SiO2 shape control; SiO2/Al/LiNbO3 structure; TCF;
Conference_Titel :
Ultrasonics Symposium (IUS), 2010 IEEE
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4577-0382-9
DOI :
10.1109/ULTSYM.2010.5935465
