Influence of the barrier properties on the mechanical stress and migration distribution in a copper metallization

Author

Kludt, Jörg ; Ciptokusumo, J. ; Weide-Zaage, K.

Author_Institution

Inf. Technol. Lab., Leibniz Univ. Hannover, Hannover, Germany

fYear

2012

fDate

16-18 April 2012

Firstpage

42374

Lastpage

42495

Abstract

An exemplified calculation of migration effects was carried out for a via structure of 32nm node dimensions with wide lines. In the mechanical simulation the process-induced stress was considered in the simulations. The mass flux divergence was determined using a user routine which allows the calculation of migration effects under EM and SM load. The investigated cases show a very good correlation between simulation and measurements from literature. Additional the influence of new barrier materials like Ruthenium, as well as different dielectrics on the thermal-electrical mechanical behaviour was investigated.

Keywords

copper; metallisation; stress analysis; barrier properties; copper metallization; mass flux divergence; mechanical simulation; mechanical stress; migration distribution; migration effects; process-induced stress; thermal-electrical mechanical behaviour; user routine; via structure; Copper; Films; Reliability; Silicon; Stress; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2012 13th International Conference on

Conference_Location

Cascais

Print_ISBN

978-1-4673-1512-8

Type

conf

DOI

10.1109/ESimE.2012.6191701

Filename

6191701