• DocumentCode
    1951781
  • Title

    A statistical model of oxide breakdown based on a physical description of wearout

  • Author

    Subramoniam, R. ; Scott, R.S. ; Dumin, D.J.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Clemson Univ., SC, USA
  • fYear
    1992
  • fDate
    13-16 Dec. 1992
  • Firstpage
    135
  • Lastpage
    138
  • Abstract
    The breakdown of oxides has been related to wearout. A model has been developed that described the statistics of breakdown in terms of the wearout that occurred prior to breakdown. TDDB distributions given in the literature were accurately simulated (i) for area dependence, (ii) for both constant voltage and constant current stressing, and (iii) for multi-modal distributions. Defect related breakdown was incorporated by introducing the concept of "degree of wearout". A possible method for determining the reliability of an oxide at operating voltages from the accelerated test results has been developed.<>
  • Keywords
    electric breakdown of solids; insulating thin films; life testing; semiconductor device models; semiconductor device testing; semiconductor devices; statistical analysis; TDDB distributions; accelerated test results; area dependence; constant current stressing; constant voltage stressing; defect related breakdown; insulating thin films; multi-modal distributions; oxide breakdown; reliability; semiconductor device testing; statistical model; wearout; Dielectric films; Electric breakdown; Life estimation; Semiconductor device modeling; Semiconductor device testing; Semiconductor devices; Statistics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
  • Conference_Location
    San Francisco, CA, USA
  • ISSN
    0163-1918
  • Print_ISBN
    0-7803-0817-4
  • Type

    conf

  • DOI
    10.1109/IEDM.1992.307326
  • Filename
    307326