Title :
A new power W-gated trench MOSFET (WMOSFET) with high switching performance
Author :
Darwish, Mahmoud ; Yue, Christiana ; Lui, Kam Hong ; Giles, Frederick ; Chan, Ben ; Chen, Kuo-in ; Pattanayak, Deva ; Chen, Qufei ; Terrill, Kyle ; Owyang, King
Author_Institution :
Vishay-Siliconix, Santa Clara, CA, USA
Abstract :
A new power Trench MOSFET with W-shaped gate structure (WMOSFET) that demonstrates a significant reduction in gate-drain charge Qgd, a low on-resistance, and good production process margin is reported. The gate is formed using a thicker oxide at the bottom of the trench that is self-aligned to the P-body/N-epi junction. Fabricated 35 V N-channel devices exhibit a Rdson*Qgd Figure of Merit of 12.5 mΩ.nC with VGS=10V and VDD=15V. Experimental data of devices fabricated using LOCOS and Sub Atmospheric CVD (SACVD) processes to form the thicker oxide layer along with simulation results are presented.
Keywords :
chemical vapour deposition; power MOSFET; semiconductor device measurement; semiconductor device models; 10 V; 15 V; 35 V; LOCOS; N-channel device; N-epi junction; P-body; SACVD process; W-shaped gate structure; WMOSFET; gate-drain charge; metal oxide semiconductor field effect transistor; on-resistance; oxide layer; power W-gated trench MOSFET; production process margin; sub atmospheric chemical vapor deposition; switching performance; Atmospheric modeling; Capacitance; DC-DC power converters; Doping profiles; Energy management; Implants; MOSFET circuits; Power MOSFET; Production; Pulse width modulation;
Conference_Titel :
Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on
Print_ISBN :
0-7803-7876-8
DOI :
10.1109/ISPSD.2003.1225222
