Low voltage super junction MOSFET simulation and experimentation

Author

Henson, Timothy ; Cao, Joe

Author_Institution

Int. Rectifier, El Segundo, CA, USA

fYear

2003

fDate

14-17 April 2003

Firstpage

37

Lastpage

40

Abstract

The application of Super Junction concepts to a low voltage power MOSFET is investigated. The body junction is modified with the addition of a high energy implant, resulting in an increased breakdown voltage. Simulations are used to quantify the relationship between dose and breakdown voltage, resulting in a predicted 35% Rds(on) reduction. This is confirmed through experiment, and a 19% reduction in Rds(on) is reported at 75V. No change in device reliability is observed. This approach provides a simple means to reduce the on resistance of low voltage MOSFETs.

Keywords

electric resistance measurement; power MOSFET; semiconductor device breakdown; semiconductor device models; 75 V; body junction; breakdown voltage; device reliability; dose voltage; high energy implant; metal oxide semiconductor field effect transistor; on-resistance; power MOSFET; super junction MOSFET simulation; Boron; Doping; Electric breakdown; Immune system; Implants; Low voltage; MOSFET circuits; Power MOSFET; Predictive models; Rectifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on

Print_ISBN

0-7803-7876-8

Type

conf

DOI

10.1109/ISPSD.2003.1225225

Filename

1225225