Title :
Gate-induced band-to-band tunneling leakage current in LDD MOSFETs
Author :
Hsing-jen Wann ; Ko, P.K. ; Chenming Hu
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
Theoretical and experimental studies are presented to model the gate-induced drain leakage(GIDL) current due to band-to-band tunneling, which is one of the major leakage components in off-state MOSFETs. The model shows a good agreement with the experimental data for more than 7 decades of current magnitudes. Therefore the impact of this tunneling leakage current can be correctly evaluated. Based on this model, the impact of GIDL on low off-state leakage drain engineering and on oxide scaling is investigated.<>
Keywords :
insulated gate field effect transistors; leakage currents; reliability; semiconductor device models; tunnelling; LDD MOSFETs; band-to-band tunneling; gate-induced drain leakage current; model; offstate device; oxide scaling; tunneling leakage current; Insulated gate FETs; Leakage currents; Reliability; Semiconductor device modeling; Tunneling;
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1992.307329
