600V semi-superconjunction MOSFET

Author

Saito, Wataru ; Omura, Ichiro ; Aida, Satoshi ; Koduki, Shigeo ; Izumisawa, Masaru ; Ogura, Tsuneo

Author_Institution

Toshiba Corp. Semicond. Co., Kawasaki, Japan

fYear

2003

fDate

14-17 April 2003

Firstpage

45

Lastpage

48

Abstract

New superconjunction (SJ) structure is proposed and demonstrated for the power-switching device with remarkable advantage over conventional SJ structure. An n-doped layer is connected to the bottom of the SJ structure for the proposed structure. It is found with experiment and simulation that the proposed structure shows both the lower on-resistance and the softer recovery of body diode than conventional SJ MOSFET. The fabricated Semi-SJ MOSFETs realize Ron as low as 54 mΩcm² (48 mΩcm² in calculation) at 690 V breakdown voltage with only half depth of the p-column than the conventional SJ MOSFET. The softness factor of body diode is also improved in the factor of 4.5. The proposed MOSFET is very attractive for H-bridge topology applications such as UPSs and small inverter systems thanks to the low on-resistance and the soft recovery body diode.

Keywords

power MOSFET; semiconductor device measurement; semiconductor device models; semiconductor junctions; 600 V; 690 V; H-bridge topology application; SJ structure; body diode; breakdown voltage; metal oxide semiconductor field effect transistor; n-doped layer; on-resistance; p-column; power MOSFET; power-switching device; semisuperconjunction MOSFET; softness factor; Costs; Doping; Electric resistance; Epitaxial growth; Fabrication; Immune system; Inverters; MOSFET circuits; Power MOSFET; Semiconductor diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on

Print_ISBN

0-7803-7876-8

Type

conf

DOI

10.1109/ISPSD.2003.1225227

Filename

1225227