A technology portable analytical model for DSM CMOS inverter short-circuit power estimation

In this paper, an accurate analytical model for DSM (deep sub-micron) CMOS inverter short-circuit power estimation is presented. Unlike previous works, which always require extracted or fitting parameters, the proposed model depends only on the inverter dimension and SPICE parameters. Its accuracy and portability have been validated by comparing with BSIM3v3 MOSFET model simulation results for TSMC 0.18 μm and UMC 0.13 μm CMOS technologies, and for a wide range of inverter sizes, input transition times, and capacitive loads. The relative error is less than 15% in most cases, showing very good agreement with Spectre simulation.