Title :
3.6 mΩcm2, 1726V 4H-SiC normally-off trenched-and-implanted vertical JFETs
Author :
Zhao, J.H. ; Tone, K. ; Li, X. ; Alexandrov, P. ; Fursin, L. ; Weiner, M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA
Abstract :
A normally-off 4H-SiC trenched-and-implanted vertical JFET (TI-VJFET) with a low specific on-resistance has been demonstrated. The low specific on-resistance (Rsp) of 3.6 mΩcm2 is achieved for a blocking voltage (Vbl) up to 1726V by eliminating the internal lateral JFET gates. The TI-VJFET technology developed is advantageous in comparison to other reported VJFET technologies because (a) it eliminates the need for epitaxial regrowth in middle of the device fabrication, (b) only one mask requires critical alignment throughout device fabrication, and (c) it provides intrinsically a much lower specific on-resistance due to the elimination of internal lateral JFET gates. The Vbl2/Rsp value of 830 MW/cm2 for the TI-VJFET substantially surpasses all past records of both unipolar and bipolar SiC power switches.
Keywords :
ion implantation; junction gate field effect transistors; masks; power field effect transistors; power semiconductor switches; semiconductor device measurement; semiconductor device models; silicon compounds; wide band gap semiconductors; 1726 V; JFET gate; SiC; TI-VJFET; bipolar power switch; blocking voltage; critical alignment; device fabrication; epitaxial regrowth; junction field effect transistor; specific on-resistance; trenched-and-implanted vertical JFET; unipolar power switch; Annealing; Etching; Fabrication; JFETs; Passivation; Planarization; Plasma applications; Plasma temperature; Polyimides; Silicon carbide;
Conference_Titel :
Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on
Print_ISBN :
0-7803-7876-8
DOI :
10.1109/ISPSD.2003.1225228
