DocumentCode :
1951889
Title :
New rigorous description of diffusion and reactions on arbitrary (grain boundary) networks by a 4th rank tensor theory
Author :
Orlowski, M.
Author_Institution :
Adv. Products Res. & Dev. Lab., Motorola Inc., Austin, TX, USA
fYear :
1992
fDate :
13-16 Dec. 1992
Firstpage :
161
Lastpage :
164
Abstract :
A new approach to describe rigorously diffusion and diffusion-related reactions on arbitrary networks consisting, for example, of grain boundaries in coarse materials. The method is based on density function approach to diffusion and on an adjacency matrix concept used in graph theory extended here to a 4th rank tensor algebra to describe arbitrary consecutive diffusional jumps on a 2D lattice. The application of the method to various network geometries reveals among other things a new phenomenon: In contrast to homogeneous medium, diffusion on microscopic networks leads to a concentration build-up at the network intersections instead of smoothing out. In columnar grain films, this phenomenon constitutes a new kind of segregation mechanism. Several applications relevant to semiconductor processes are rigorously evaluated and offer insight into their true nature for the first time.<>
Keywords :
algebra; grain boundary diffusion; grain boundary segregation; semiconductor thin films; tensors; adjacency matrix; arbitrary consecutive diffusional jumps; coarse materials; columnar grain films; density function approach; diffusion-related reaction; grain boundaries; network geometries; network intersections; segregation mechanism; semiconductor processes; tensor algebra; Algebra; Diffusion processes; Semiconductor films;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
ISSN :
0163-1918
Print_ISBN :
0-7803-0817-4
Type :
conf
DOI :
10.1109/IEDM.1992.307332
Filename :
307332
Link To Document :
بازگشت