Title :
600V-IGBT3: trench field stop technology in 70 μm ultra thin wafer technology
Author :
Ruething, H. ; Umbach, F. ; Hellmund, O. ; Kanscha, P. ; Schmidt, G.
Author_Institution :
Infineon Technol. AG, Muenchen, Germany
Abstract :
The established trench field stop technology called IGBT3 is transferred to 600V and supplements the 1200V and 1700V family. Besides am adjustment of cell geometry and pitch for an optimum compromise between on-state loss and short-circuit current the ability to process ultra thin wafers with a thickness of 70 μm is the most demanding requirement for this device. One of the most important steps with the 600V device is the extension of the maximum junction temperature to 175°C which is an increase of 25°C in comparison to commonly known IGBT chips.
Keywords :
circuit optimisation; insulated gate bipolar transistors; semiconductor device manufacture; semiconductor device models; 175 C; 600 V; 70 micron; IGBT3; cell geometry; cell pitch; insulated gate bipolar transistor; junction temperature; on-state loss; short-circuit current; trench field stop technology; ultra thin wafer technology; Annealing; Cathodes; Conductivity; Current density; Diodes; Geometry; Insulated gate bipolar transistors; Microelectronics; Temperature; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on
Print_ISBN :
0-7803-7876-8
DOI :
10.1109/ISPSD.2003.1225231
