Title :
Modeling of a sputter reactor using the direct simulation Monte Carlo method
Author :
Kersch, A. ; Morokoff, W. ; Werner, C. ; Restaino, D. ; Vollmer, B.
Author_Institution :
Corp. Res. & Dev., Siemens AG, Munich, Germany
Abstract :
The direct simulation Monte Carlo method is utilized to simulate the particle and energy distributions in a state of the art sputtering reactor used to deposit titanium films in small contact holes. The calculations provide information about particle and temperature distributions within the reactor, deposition rate profiles, and angular distributions of the atoms arriving at the substrate. The results agree quite well with experimental data.<>
Keywords :
Monte Carlo methods; metallisation; semiconductor process modelling; simulation; sputter deposition; temperature distribution; titanium; Ti films; angular distributions; deposition rate profiles; direct simulation Monte Carlo method; energy distributions; numerical method; particle distributions; small contact holes; sputter reactor; temperature distributions; Metallization; Monte Carlo methods; Semiconductor process modeling; Simulation; Sputtering; Temperature; Titanium;
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1992.307337
