Hot spot dynamics in quasivertical DMOS under ESD stress

Author

Denison, Mane ; Blaho, Matej ; Silber, Dieter ; Joos, Joachim ; Jensen, Nils ; Stecher, Matthias ; Dubec, Viktor ; Pogany, Dionyz ; Gornik, E.

Author_Institution

Infineon Technol., Munich, Germany

fYear

2003

fDate

14-17 April 2003

Firstpage

80

Lastpage

83

Abstract

Quasivertical DMOS transistors in a 90V Smart Power Technology are studied under ElectroStatic Discharge (ESD) stress. Movement of current filaments and multiple hot spots are observed under snap-back conditions. The hot spot dynamics are explained in terms of the movement of a base push-out region across the cell field as a consequence of the temperature dependence of avalanche generation. The described mechanisms help homogenizing the time averaged current density distribution and enhance the device robustness against ESD events.

Keywords

power MOSFET; semiconductor device models; semiconductor device testing; 90 V; ESD stress; avalanche generation; base push-out region; cell field; current density distribution; current filament; double diffused metal oxide semiconductor; electrostatic discharge; hot spot dynamics; quasivertical DMOS; smart power technology; snap-back condition; temperature dependence; Current density; Electrostatic discharge; Fingers; Impact ionization; Pulse measurements; Robustness; Solid state circuits; Temperature dependence; Thermal stresses; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on

Print_ISBN

0-7803-7876-8

Type

conf

DOI

10.1109/ISPSD.2003.1225235

Filename

1225235