A unified hot carrier degradation model for integrated lateral and vertical nDMOS transistors

Author

Moens, P. ; Van den bosch, G. ; Groeseneken, G. ; Bolognesi, D.

Author_Institution

Technol. R&D, AMI Semicond. Belgium BVBA, Oudenaarde, Belgium

fYear

2003

fDate

14-17 April 2003

Firstpage

88

Lastpage

91

Abstract

In this paper, the hot carrier degradation behavior of integrated lateral and vertical DMOS transistors is analyzed. It will be shown that a unified degradation model is applicable to both devices. In the LDMOS, two degradation mechanisms occur: the electron mobility decreases due to increased carrier scattering upon D_it formation; and hot-hole injection and trapping occurs in the drift region. It will be shown that the second mechanism is absent in the VDMOS. TCAD simulations are used to support the experimental findings.

Keywords

MOSFET; circuit simulation; electron mobility; hot carriers; semiconductor device models; LDMOS; TCAD simulation; carrier scattering; drift region; electron mobility; hot carrier degradation model; hot-hole injection; integrated lateral nDMOS transistor; laterally diffused metal oxide semiconductor; vertical nDMOS transistor; Ambient intelligence; Charge measurement; Charge pumps; Current measurement; Degradation; Electron mobility; Hot carriers; Research and development; Stress measurement; Time measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on

Print_ISBN

0-7803-7876-8

Type

conf

DOI

10.1109/ISPSD.2003.1225237

Filename

1225237