A high reliability and low loss 3-phase gate driver IC with a novel soft gate drive circuit for 42V motor generator system

Author

Inaba, Masamitsu ; Sakano, Junichi ; Miyazaki, Hideki ; Iwamura, Masahiro ; Maeda, Yuji ; Mashino, Keiichi ; Nagai, Yasuo ; Mori, Mutsuhiro

Author_Institution

Hitachi Ltd., Ibaraki, Japan

fYear

2003

fDate

14-17 April 2003

Firstpage

97

Lastpage

100

Abstract

We have developed a three-phase driver IC for the 42V motor generator automotive system using a 100V class SOI isolated 0.5μm three metal layer bipolar CMOS LDMOS process SOIPIC (SOI Intellectual Property Power IC). This IC has a soft gate drive function with a new concept of loss minimization for a low on-state-resistance 100V 500A class trench power MOSFET.

Keywords

automotive electronics; driver circuits; integrated circuit reliability; motor drives; power MOSFET; power integrated circuits; silicon-on-insulator; 0.5 micron; 100 V; 3-phase gate driver IC; 42 V; 500 A; SOI intellectual property power IC; SOIPIC; Si-SiO₂; automotive system; bipolar CMOS LDMOS process; complementary metal oxide semiconductor; laterally diffused metal oxide semiconductor; loss minimization; metal oxide semiconductor field effect transistor; motor generator system; on-state-resistance; silicon on insulator; soft gate drive circuit; trench power MOSFET; Automotive engineering; Bipolar integrated circuits; CMOS integrated circuits; CMOS process; Driver circuits; Intellectual property; MOSFET circuits; Minimization; Power generation; Power integrated circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on

Print_ISBN

0-7803-7876-8

Type

conf

DOI

10.1109/ISPSD.2003.1225239

Filename

1225239