Electrical and mechanical package design for 4.5kV ultra high power IEGT with 6kA turn-off capability

Author

Omura, Ichiro ; Domon, Tomokazu ; Miyake, Eitam ; Sakiyama, Yoko ; Ogura, Tsuneo ; Hiyoshi, Michiaki ; Yamano, Nobuaki ; Ohashi, Hiromichi

Author_Institution

Toshiba Corp. Semicond. Co., Kawasaki, Japan

fYear

2003

fDate

14-17 April 2003

Firstpage

114

Lastpage

117

Abstract

An ultra high power MOS gate device IEGT has developed. A new pressure contact package has been designed considering the gate wiring to avoid current imbalance among chips. The Cu post is also designed to attain homogenous pressure profile in the chip surface. The new package contains 42 IEGT and demonstrates high current turn-off over 6kA under 2.7kV DC bus voltage.

Keywords

insulated gate bipolar transistors; integrated circuit packaging; power transistors; 4.5 kV; 6 kA; Cu; DC bus voltage; MOS gate device; chip surface; current imbalance; electrical package design; gate wiring; high power IEGT; homogenous pressure profile; injection enhancement IGBT; injection enhancement gate transistor; insulated gate bipolar transistor; mechanical package design; metal oxide semiconductor; pressure contact package; turn-off capability; Assembly; Inductance; Insulated gate bipolar transistors; Printed circuits; Semiconductor device measurement; Semiconductor device packaging; Shape measurement; Testing; Voltage; Wiring;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on

Print_ISBN

0-7803-7876-8

Type

conf

DOI

10.1109/ISPSD.2003.1225243

Filename

1225243