Title :
Electrical and mechanical package design for 4.5kV ultra high power IEGT with 6kA turn-off capability
Author :
Omura, Ichiro ; Domon, Tomokazu ; Miyake, Eitam ; Sakiyama, Yoko ; Ogura, Tsuneo ; Hiyoshi, Michiaki ; Yamano, Nobuaki ; Ohashi, Hiromichi
Author_Institution :
Toshiba Corp. Semicond. Co., Kawasaki, Japan
Abstract :
An ultra high power MOS gate device IEGT has developed. A new pressure contact package has been designed considering the gate wiring to avoid current imbalance among chips. The Cu post is also designed to attain homogenous pressure profile in the chip surface. The new package contains 42 IEGT and demonstrates high current turn-off over 6kA under 2.7kV DC bus voltage.
Keywords :
insulated gate bipolar transistors; integrated circuit packaging; power transistors; 4.5 kV; 6 kA; Cu; DC bus voltage; MOS gate device; chip surface; current imbalance; electrical package design; gate wiring; high power IEGT; homogenous pressure profile; injection enhancement IGBT; injection enhancement gate transistor; insulated gate bipolar transistor; mechanical package design; metal oxide semiconductor; pressure contact package; turn-off capability; Assembly; Inductance; Insulated gate bipolar transistors; Printed circuits; Semiconductor device measurement; Semiconductor device packaging; Shape measurement; Testing; Voltage; Wiring;
Conference_Titel :
Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on
Print_ISBN :
0-7803-7876-8
DOI :
10.1109/ISPSD.2003.1225243
