A temperature compensation subsystem for an IMEMS CMOS pressure sensor

Author

Chavez, Fernando ; Olmos, Alfredo ; Leme, Carlos Azeredo ; Charry, Edgar

Author_Institution

Lab. de Sistemas Integraveis, Sao Paulo Univ., Brazil

fYear

1998

fDate

13-16 Sep 1998

Firstpage

399

Lastpage

403

Abstract

This work presents a temperature compensation subsystem for a piezoresistive pressure microsensor system operating between 0-50 kPa for medical purposes. Different full scale span and offset voltage can be compensated easily against temperature effects with a CMOS circuit that generates two temperature dependent voltages with 64 possible settings of temperature coefficients: the drive voltage of the active bridge and the reference voltage of the offset cancellation DAC. The subsystem showed a total power dissipation of approximately 3 mW working with 3 volts of power supply

Keywords

CMOS integrated circuits; biomedical electronics; biomedical transducers; compensation; microsensors; piezoresistive devices; pressure sensors; 0 to 50 kPa; 3 V; 3 mW; CMOS pressure sensor; IMEMS; active bridge; drive voltage; medical applications; offset cancellation DAC; offset voltage; piezoresistive microsensor system; temperature coefficients; temperature compensation subsystem; temperature effects; total power dissipation; Bridge circuits; Calibration; Fabrication; Piezoresistance; Resistors; Sensor arrays; Sensor phenomena and characterization; Temperature dependence; Temperature sensors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

ASIC Conference 1998. Proceedings. Eleventh Annual IEEE International

Conference_Location

Rochester, NY

ISSN

1063-0988

Print_ISBN

0-7803-4980-6

Type

conf

DOI

10.1109/ASIC.1998.723056

Filename

723056