• DocumentCode
    1952259
  • Title

    Study of CNT growth termination mechanism: Effect of catalyst diffusion

  • Author

    Gao, Zhao Ii ; Yuen, M.M.F.

  • Author_Institution
    Dept. of Mech. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China
  • fYear
    2012
  • fDate
    16-18 April 2012
  • Firstpage
    42374
  • Lastpage
    42495
  • Abstract
    Carbon nanotube (CNT) growth termination mechanism has been studied using Molecular Dynamic (MD) simulation. Due to catalyst diffusion and interaction between the catalyst and the CNT growth substrates, the catalytic activity needed for CNT nucleation is depleted. Diffusion coefficient of the Fe catalyst on different substrates has been evaluated using averaged mean square displacement (MSD) of the Fe atoms in the simulation. At the CNT growth temperature, Fe on Cu substrate shows the highest diffusion coefficient. The calculated low diffusion coefficient of Fe atoms in Al2O3 substrate confirms the use of Al2O3 as the choice material for the diffusion buffer layer. This is consistent with observations in CNT growth experiments using thermal chemical vapor deposition (CVD). The MD simulation provides a clear demonstration of Al2O3 as an effective diffusion buffer material.
  • Keywords
    alumina; carbon nanotubes; catalysis; catalysts; chemical vapour deposition; diffusion; iron; mean square error methods; molecular dynamics method; nucleation; Al2O3; CNT growth experiments; CNT growth substrates; CNT growth temperature; CNT growth termination mechanism; CNT nucleation; CVD; MD simulation; MSD; alumina substrate; averaged mean square displacement; carbon nanotube growth termination mechanism; catalyst diffusion; catalyst interaction; catalytic activity; diffusion buffer layer; diffusion buffer material; diffusion coefficient; iron catalyst; molecular dynamic simulation; thermal chemical vapor deposition; Arrays; Artificial intelligence; Carbon; Carbon nanotubes; Copper; Substrates; Thermal resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2012 13th International Conference on
  • Conference_Location
    Cascais
  • Print_ISBN
    978-1-4673-1512-8
  • Type

    conf

  • DOI
    10.1109/ESimE.2012.6191723
  • Filename
    6191723