Title :
13-kV rectifiers: studies on diodes and asymmetric thyristors
Author :
Niedernostheide, F.-J. ; Schulze, H.-J. ; Kellner-Werdehausen, U. ; Barthelmess, R. ; Przybilla, J. ; Keller, R. ; Schoof, H. ; Pikorz, D.
Author_Institution :
Infineon AG, Munich, Germany
Abstract :
For rectifiers with high blocking voltages, the application of field stop layers reduces power losses. Preliminary experimental results are presented from asymmetric 13-kV thyristor samples based on a conventional field stop concept. By connecting a 13-kV diode in series to this asymmetric thyristor, a symmetrically-blocking tandem device can be built. Numerical studies show that the turn-off behavior of the 13-kV diode required for the tandem solution can be significantly improved by a new field stop concept based on an n layer buried in the weakly-doped region of the p+-n--n+ power diode.
Keywords :
power semiconductor diodes; solid-state rectifiers; thyristors; 13 kV; asymmetric thyristor; conventional field stop concept; field stop layer; high blocking voltage; power diode; power loss; symmetrically-blocking tandem device; turn-off behavior; weakly-doped region; Anodes; Boron; Capacitors; Cathodes; Diodes; Doping profiles; Rectifiers; Temperature; Thyristors; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on
Print_ISBN :
0-7803-7876-8
DOI :
10.1109/ISPSD.2003.1225245