DocumentCode
1952284
Title
13-kV rectifiers: studies on diodes and asymmetric thyristors
Author
Niedernostheide, F.-J. ; Schulze, H.-J. ; Kellner-Werdehausen, U. ; Barthelmess, R. ; Przybilla, J. ; Keller, R. ; Schoof, H. ; Pikorz, D.
Author_Institution
Infineon AG, Munich, Germany
fYear
2003
fDate
14-17 April 2003
Firstpage
122
Lastpage
125
Abstract
For rectifiers with high blocking voltages, the application of field stop layers reduces power losses. Preliminary experimental results are presented from asymmetric 13-kV thyristor samples based on a conventional field stop concept. By connecting a 13-kV diode in series to this asymmetric thyristor, a symmetrically-blocking tandem device can be built. Numerical studies show that the turn-off behavior of the 13-kV diode required for the tandem solution can be significantly improved by a new field stop concept based on an n layer buried in the weakly-doped region of the p+-n--n+ power diode.
Keywords
power semiconductor diodes; solid-state rectifiers; thyristors; 13 kV; asymmetric thyristor; conventional field stop concept; field stop layer; high blocking voltage; power diode; power loss; symmetrically-blocking tandem device; turn-off behavior; weakly-doped region; Anodes; Boron; Capacitors; Cathodes; Diodes; Doping profiles; Rectifiers; Temperature; Thyristors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on
Print_ISBN
0-7803-7876-8
Type
conf
DOI
10.1109/ISPSD.2003.1225245
Filename
1225245
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