Title :
An optimized RESURF LDMOS power device module compatible with advanced logic processes
Author :
Efland, T. ; Malhi, S. ; Bailey, W. ; Oh Kyong Kwon ; Wai Tung Ng ; Torreno, M. ; Keller, S.
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
An advanced optimized RESURF LDMOS device intended for use in low side applications and suitable for integration into advanced CMOS and BiCMOS processes is described. Devices with 84 V and 97 V breakdown voltages have been modeled and fabricated with excellent specific on-resistance performance at CMOS level gate drives. Specific on-resistance of 2.0 m Omega .cm/sup 2/ at 97 V represents the best performance in this voltage class.<>
Keywords :
BiCMOS integrated circuits; CMOS integrated circuits; integrated logic circuits; metal-insulator-semiconductor devices; power electronics; 84 V; 97 V; BiCMOS; CMOS; advanced logic processes; breakdown voltages; gate drives; low side applications; optimized RESURF LDMOS power device; specific on-resistance performance; BiCMOS integrated circuits; CMOS integrated circuits; MIS devices; Power electronics;
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1992.307350
