Title :
IGBT mode turn-off thyristor (IGTT) fabricated on SOI substrate
Author :
Ogura, T. ; Nakagawa, A.
Author_Institution :
Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan
Abstract :
A new lateral MOS-gated thyristor, called an IGBT mode turn-off thyristor (IGTT), fabricated on an SOI substrate is proposed. A maximum turn-off current of more than 150 A/cm/sup 2/, which is 10 times larger than that of a conventional MOS-gated thyristor, has been realized. A homogeneous current distribution at the turn-off stage and a low shorting resistance between the p-base layer and the cathode attained by the IGTT are assumed to increase the maximum turn-off capability. The forward voltage drop in the IGTT is much smaller than that of an IGBT with an approximately equivalent turn-off time.<>
Keywords :
insulated gate bipolar transistors; power electronics; semiconductor-insulator boundaries; thyristors; IGBT mode turn-off thyristor; IGTT; SOI substrate; forward voltage drop; homogeneous current distribution; lateral MOS-gated thyristor; shorting resistance; turn-off current; Insulated gate bipolar transistors; Power electronics; Semiconductor-insulator interfaces; Thyristors;
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1992.307351
