Modelling and analysis of current sensors for N-channel, vertical IGBTs

Author

Chow, T.P. ; Shen, Z. ; Pattanayak, D.N. ; Wildi, E.J. ; Adler, M.S. ; Baliga, B.J.

Author_Institution

Dept. of Electr. Comput. & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA

fYear

1992

fDate

13-16 Dec. 1992

Firstpage

253

Lastpage

256

Abstract

The static and dynamic performance of integrated current sensors in 500V, n-channel, asymmetric, vertical IGBTs are modelled and experimentally characterized. Two different current sensor structures are studied and compared. The active IGBT pilot shows more linear tracking of the main current with small pilot load resistor but the passive pilot is less susceptible to debiasing effect for a large resistor. During turn-on, the active pilot leads the main current due to RC delay whereas the passive pilot lags due to minority carrier diffusion.<>

Keywords

insulated gate bipolar transistors; power transistors; semiconductor device models; 500 V; N-channel vertical IGBTs; active pilot; current sensors; debiasing effect; dynamic performance; linear tracking; minority carrier diffusion; passive pilot; pilot load resistor; static performance; turn-on; Insulated gate bipolar transistors; Power transistors; Semiconductor device modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-0817-4

Type

conf

DOI

10.1109/IEDM.1992.307354

Filename

307354