Large area, 1.3 kV, 17 A, bipolar junction transistors in 4H-SiC

Author

Agarwal, Anant K. ; Ryu, Sei-Hyung ; Richmond, James ; Capell, Craig ; Palmour, John W. ; Tang, Yi ; Balachandran, S. ; Chow, T. Paul

Author_Institution

Cree, Inc., Durham, NC, USA

fYear

2003

fDate

14-17 April 2003

Firstpage

135

Lastpage

138

Abstract

In this paper, high performance, high voltage NPN bipolar junction transistors in 4H-SiC are presented for applications in low frequency (<5 MHz) power conversion systems. The power BJTs for low frequency switching applications were designed to block 1300 V and showed a specific on-resistance of 8.0 mohm-cm², which outperforms all SiC power switching devices ever reported. Moreover, these transistors show a positive temperature coefficient in the on-resistance and a negative temperature coefficient in the current gain, which enable easy paralleling of the devices.

Keywords

high-voltage techniques; power bipolar transistors; power conversion; semiconductor device measurement; silicon compounds; wide band gap semiconductors; 1.3 kV; 1300 V; 17 A; SiC; bipolar junction transistor; current gain; low frequency power conversion system; negative temperature coefficient; positive temperature coefficient; power switching device; Doping; Etching; Fingers; Frequency conversion; MOSFETs; Material properties; Power conversion; Silicon carbide; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on

Print_ISBN

0-7803-7876-8

Type

conf

DOI

10.1109/ISPSD.2003.1225248

Filename

1225248