Title :
Large area, 1.3 kV, 17 A, bipolar junction transistors in 4H-SiC
Author :
Agarwal, Anant K. ; Ryu, Sei-Hyung ; Richmond, James ; Capell, Craig ; Palmour, John W. ; Tang, Yi ; Balachandran, S. ; Chow, T. Paul
Author_Institution :
Cree, Inc., Durham, NC, USA
Abstract :
In this paper, high performance, high voltage NPN bipolar junction transistors in 4H-SiC are presented for applications in low frequency (<5 MHz) power conversion systems. The power BJTs for low frequency switching applications were designed to block 1300 V and showed a specific on-resistance of 8.0 mohm-cm2, which outperforms all SiC power switching devices ever reported. Moreover, these transistors show a positive temperature coefficient in the on-resistance and a negative temperature coefficient in the current gain, which enable easy paralleling of the devices.
Keywords :
high-voltage techniques; power bipolar transistors; power conversion; semiconductor device measurement; silicon compounds; wide band gap semiconductors; 1.3 kV; 1300 V; 17 A; SiC; bipolar junction transistor; current gain; low frequency power conversion system; negative temperature coefficient; positive temperature coefficient; power switching device; Doping; Etching; Fingers; Frequency conversion; MOSFETs; Material properties; Power conversion; Silicon carbide; Temperature; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on
Print_ISBN :
0-7803-7876-8
DOI :
10.1109/ISPSD.2003.1225248
