Title :
Stacked high voltage switch based on SiC VJFETs
Author :
Friedrichs, Peter ; Mitlehner, Heinz ; Schörner, Reinhold ; Dohnke, Karl-Otto ; Elpelt, Rudolf ; Stephani, Dietrich
Author_Institution :
SiCED Electron. Dev. GmbH & Co. KG, Siemens Co., Erlangen, Germany
Abstract :
Based on the serial connection of high voltage SiC VJFETs a stacked solution able to block very high voltages is presented. By connecting VJFETs in series, a unipolar high voltage switch with 8kV blocking voltage and an on-resistance of 2Ω was fabricated. The basic functions of this stacked switch are analyzed by discussing the electrical behavior. The static and dynamic behavior indicates an interesting perspective for high voltage and high power applications. Especially the dynamics are carefully analyzed using a low voltage version of the stacked solution. Additionally, the potential of SiC VJFETs as a 4kV single switch is demonstrated.
Keywords :
high-voltage techniques; junction gate field effect transistors; power field effect transistors; semiconductor switches; silicon compounds; wide band gap semiconductors; 2 ohms; 4 kV; 8 kV; SiC; SiC VJFET; blocking voltage; dynamic behavior; electrical behavior; high power application; single switch; stacked high voltage switch; static behavior; Charge carrier lifetime; Epitaxial layers; HVDC transmission; Joining processes; Low voltage; MOSFETs; Silicon carbide; Substrates; Switches; Voltage control;
Conference_Titel :
Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on
Print_ISBN :
0-7803-7876-8
DOI :
10.1109/ISPSD.2003.1225249
