DocumentCode
1952425
Title
Trench isolation with Del (nabla)-shaped buried oxide for 256 mega-bit DRAMs
Author
Shibahara, K. ; Fujimoto, Y. ; Hamada, M. ; Iwao, S. ; Tokashiki, K. ; Kunio, T.
Author_Institution
Microelectron. Res. Labs., NEC Corp., Sagamihara, Japan
fYear
1992
fDate
13-16 Dec. 1992
Firstpage
275
Lastpage
278
Abstract
A new trench isolation with Del -shaped buried oxide is proposed. The Del -shape of the buried oxide is a key to control trench sidewall inversion which is a well known obstacle for practical application of a trench isolation. Its fabrication process is simple and has good feasibility for 256 Mb DRAM application. In addition to good isolation characteristics, low junction capacitance is an advantage for DRAM performance.<>
Keywords
DRAM chips; MOS integrated circuits; insulating thin films; integrated circuit technology; silicon compounds; 256 Mbit; DRAM; SiO/sub 2/; SiO/sub 2/ film; fabrication; isolation characteristics; junction capacitance; n-MOS; nabla-shaped buried oxide; trench isolation; trench sidewall inversion; DRAM chips; Dielectric films; Integrated circuit fabrication; MOS integrated circuits; Silicon compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-0817-4
Type
conf
DOI
10.1109/IEDM.1992.307359
Filename
307359
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