Advanced thin wafer IGBTs with new thermal management solution

This paper presents the new design concepts for improving the short-circuit capability of thin wafer power devices, such as field-stop (FS) IGBTs, by thermal management techniques. The experimental results of thin wafer IGBTs, with lead-frame connection via solid copper emitter electrode, have achieved approximately 34% increase in the critical short circuit energy. In addition, compared to the conventional assembling techniques, the new techniques make it possible to keep the lower device temperature during the normal switching operation. It has been found out that 30% reduction in die size can be expected under the conditions of having the same junction temperature increase (ΔTj).