Thermal performance evaluation of SiC power devices packaging

Author

Gracia, A. ; Azzopardi, S. ; Woirgard, Eric

Author_Institution

IMS Lab., Univ. of Bordeaux, Talence, France

fYear

2012

fDate

16-18 April 2012

Firstpage

42374

Lastpage

42495

Abstract

The development of power components based on silicon carbide (SiC) allows high power densities, size reduction and elevated operating temperatures (above 200 or 300°C). In this study, we present solutions for SiC device packaging base on 3D finite element simulation and experimental approach. Various test vehicles were assembled with different die attach and substrate. New materials like copper carbide (CuC) and copper diamond (Cu-diamond) were selected for base plate. Their thermal performances were evaluated through the measurement of the thermal resistance and 3D finite elements simulations.

Keywords

finite element analysis; power semiconductor devices; semiconductor device packaging; thermal resistance; 3D finite element simulation; CuC; SiC; copper carbide; copper diamond; elevated operating temperature; power component; power device packaging; silicon carbide; size reduction; substrate; thermal performance evaluation; thermal resistance; Artificial intelligence; Copper; Heating; Materials; Metallization; Silicon carbide; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2012 13th International Conference on

Conference_Location

Cascais

Print_ISBN

978-1-4673-1512-8

Type

conf

DOI

10.1109/ESimE.2012.6191731

Filename

6191731