High quality high rate SiO/sub 2/ and SiN room temperature formation by utilizing high excited ions

Author

Fukuda, T. ; Saito, K. ; Ohue, M. ; Shima, K. ; Momma, N.

Author_Institution

Res. Lab., Hitachi Ltd., Ibaraki, Japan

fYear

1992

fDate

13-16 Dec. 1992

Firstpage

285

Lastpage

288

Abstract

A new ECR (Electron Cyclotron Resonance) plasma CVD system is proposed to form high quality SiO/sub 2/ and SiN films with high rates. The system feature applies a high frequency, which ions can follow to the substrate. The system efficiently utilizes high excited ions. This system provides, without heating; 1) SiO/sub 2/ films in which Si-O bond strength and density are equivalent to a thermal oxidation (Ca. 1000 degrees C) film and can be formed at more than 1.2 mu m/min, and 2) SiN films in which density and resistivity are more than the films formed by conventional plasma CVD systems can be formed at more than 0.8 mu m/min. In addition, Si-H bond-free films can be achieved.<>

Keywords

insulating thin films; plasma CVD; plasma radiofrequency heating; silicon compounds; 1000 C; ECR; Electron Cyclotron Resonance plasma CVD; Si-H; Si-H bond-free films; SiN; SiN films; SiO/sub 2/; SiO/sub 2/ films; microwave plasma CVD; thermal oxidation; Dielectric films; Electromagnetic heating; Plasma CVD; Plasma heating; Silicon compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-0817-4

Type

conf

DOI

10.1109/IEDM.1992.307361

Filename

307361