"TOP-PECVD": a new conformal plasma enhanced CVD technology using TEOS, ozone and pulse-modulated RF plasma

Author

Ikeda, Yasuhiro ; Kishimoto, K. ; Hirose, K. ; Numasawa, Y.

Author_Institution

ULSI Device Dev. Labs., NEC Corp., Sagamihara, Japan

fYear

1992

fDate

13-16 Dec. 1992

Firstpage

289

Lastpage

292

Abstract

A new CVD technology is proposed to form a conformal SiO/sub 2/ film with superior film quality. This technology is named Tetraethylorthosilicate (TEOS) Ozone Pulse-wave Plasma Enhanced Chemical Vapor Deposition (TOP-PECVD). In the TOP-PECVD technology, TEOS-O/sub 3/ thermal film deposition and O/sub 2/+O/sub 3/ plasma film modification processes are alternately repeated in the same reaction chamber to obtain a thick and homogeneous film. The TOP-PECVD film has high conformality (Side/Top) of over 90%, which is much larger than that for a conventional TEOS-PECVD film (41%). On the other hand, it has less moisture content and smaller leakage current as compared to the conventional TEOS-PECVD film. Carbon content, measured by SIMS, is one hundredth times less than that in the TEOS-PECVD film. Delineation etching patterns show that the TOP-PECVD film has a good homogeneous quality.<>

Keywords

VLSI; insulating thin films; integrated circuit technology; plasma CVD; secondary ion mass spectroscopy; silicon compounds; O/sub 2/; O/sub 3/; SIMS; SiO/sub 2/; TEOS; TOP-PECVD; VLSI fabrication; conformal SiO/sub 2/ film; conformal plasma enhanced CVD technology; delineation etching patterns; film modification processes; film quality; leakage current; moisture content; ozone; pulse-modulated RF plasma; reaction chamber; tetraethylorthosilicate ozone pulse-wave plasma enhanced chemical vapor deposition; thermal film deposition; Dielectric films; Integrated circuit fabrication; Plasma CVD; Silicon compounds; Very-large-scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-0817-4

Type

conf

DOI

10.1109/IEDM.1992.307362

Filename

307362