Performance evaluation of a class E power amplifier loaded by a high-isolation duplexer

Author

Bahi, Ajib ; Villegas, Martine ; Diet, Antoine ; Baudoin, Geneviève ; Valenta, Václav ; Tsutsumi, Jun

Author_Institution

ESYCOM, Univ. Paris-Est, Noisy Le Grand, France

fYear

2012

fDate

19-21 Sept. 2012

Firstpage

193

Lastpage

196

Abstract

This paper presents a performance evaluation of a class-E switched-mode power amplifier, designed in pHEMT GaAs technology, loaded by a high-isolation and low-Insertion Loss (IL) duplexer. This duplexer is based on Surface Acoustic Wave (SAW) technology. Measurements of the duplexer and layout of the class E PA are simulated under Agilent-ADS with a Wideband Code Division Multiple Access signal (WCDMA) in the 1.92 - 1.98 GHz band, for transmission scenario. In this band the amplifier alone achieved 75% to 82% efficiency and 23.5dBm to 24.2dBm output power. The association of the amplifier and the duplexer permitted to reach a drain efficiency of 78% while the output power is 22.7dBm at the central frequency, in the WCDMA band a minimum of 60% efficiency and 21dBm output power is maintained.

Keywords

high electron mobility transistors; power amplifiers; WCDMA band; central frequency; class E switched mode power amplifier; drain efficiency; high isolation duplexer; low insertion loss duplexer; pHEMT technology; performance evaluation; surface acoustic wave technology; transmission scenario; wideband code division multiple access signal; Impedance; Layout; Multiaccess communication; Power amplifiers; Power generation; Spread spectrum communication; Transistors; Class E; FBAR; Power amplifier; duplexer;

fLanguage

English

Publisher

ieee

Conference_Titel

Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD), 2012 International Conference on

Conference_Location

Seville

Print_ISBN

978-1-4673-0685-0

Type

conf

DOI

10.1109/SMACD.2012.6339450

Filename

6339450